Source: Applied Physics Letters. Unidade: EP
Assunto: CIRCUITOS INTEGRADOS
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BRAGA, Nelson Liebentritt de Almeida et al. Formation of cylindrical n / p junction diodes by arsenic enhanced diffusion along interfacial misfit dislocations in p-type epitaxial 'SI' / 'SI' ('Ge'). Applied Physics Letters, v. 64, n. 11, p. 1410-2, 1994Tradução . . Acesso em: 19 maio 2024.APA
Braga, N. L. de A., Buczkowski, A., Kirk, H. R., & Rozgonyi, G. A. (1994). Formation of cylindrical n / p junction diodes by arsenic enhanced diffusion along interfacial misfit dislocations in p-type epitaxial 'SI' / 'SI' ('Ge'). Applied Physics Letters, 64( 11), 1410-2.NLM
Braga NL de A, Buczkowski A, Kirk HR, Rozgonyi GA. Formation of cylindrical n / p junction diodes by arsenic enhanced diffusion along interfacial misfit dislocations in p-type epitaxial 'SI' / 'SI' ('Ge'). Applied Physics Letters. 1994 ;64( 11): 1410-2.[citado 2024 maio 19 ]Vancouver
Braga NL de A, Buczkowski A, Kirk HR, Rozgonyi GA. Formation of cylindrical n / p junction diodes by arsenic enhanced diffusion along interfacial misfit dislocations in p-type epitaxial 'SI' / 'SI' ('Ge'). Applied Physics Letters. 1994 ;64( 11): 1410-2.[citado 2024 maio 19 ]
